Cascaded die mountings with spring-loaded contact-bond options

ABSTRACT

A cascaded die mounting device and method using spring contacts for die attachment, with or without metallic bonds between the contacts and the dies, is disclosed. One embodiment is for the direct refrigerant cooling of an inverter/converter carrying higher power levels than most of the low power circuits previously taught, and does not require using a heat sink.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Provisional Patent Applications60/435,564, filed Dec. 20, 2002, and 60/435,157, filed Dec. 20, 2002,both herein incorporated by reference.

STATEMENT REGARDING FEDERAL SPONSORSHIP

This invention was made with Government support under contract no.DE-AC05-00OR22725 to UT-Battelle, LLC, awarded by the United StatesDepartment of Energy. The Government has certain rights in theinvention.

TECHNICAL FIELD

The present invention relates to methods and apparatus forinterconnecting and packaging miniature electronic components, such asintegrated circuit chips and other devices to form larger systems. Thisinvention recognizes that cooling of power electronic dies by a liquidrefrigerant no longer restricts packaging arrangements. These packaginginnovations do not require flat cooling surfaces previously necessaryfor achieving a low thermal resistance connection to the heat sink.

DESCRIPTION OF THE BACKGROUND ART

Methods of cascading semiconductor die have been in use in thesemiconductor industry since the 1990s. This technology has beenprimarily used for memory chips in computer systems. With increasingtrends towards systems on chips this packaging methodology is rapidlyexpanding into other applications. Stacking of semiconductor die isideal for low current, low power systems. Thermal considerations haveprevented these packaging methods from being used for higher powerdevices.

Typical IGBT (Insulated Gate Bipolar Transistor) module die arrangementshave the dies attached to copper which is bonded to a ceramic backplate.The heat generated by the dies is transferred through the ceramic to theheat sink located under the backplate. Bonded wires are used forelectrical connection between the dies and electrodes. The connectionwires are encased in a podding gel for insulation, thermal transfer, andmechanical stability purposes. Thermal resistance along the heattransfer path makes the junction temperature higher than it would be fora directly liquid cooled arrangement.

With dies stacked, the small die resides atop the larger and wire bondsare brought out to either the substrate or a lower level die. Thismethod can be expanded to larger numbers of layers. Using several layersof die, the topmost layer has two separate dies sitting on the layerbeneath it. Cascading die in this manner results in increases in packingdensity, reductions in cost, less inductance, and faster signaltransmissions because the dies are closely stacked. Most stackingmethods still rely on wire bonds for bringing the I/O from the outsideworld to the silicon.

Within the semiconductor packaging industry there is a growing desire tomove away from the wire bonding of the die to the substrate or outputpins. Size, performance, and cost considerations are driving newpackaging methods. This is true for low as well as high power devices.

Silicon Power Corporation is developing a new packaging method for powerdevices. The wire-bondless package is a soldered assembly of asemiconductor power device, such as an IGBT, and a thin ceramic lid. Thelid is metalized on the bottom side and designed to mate to large andsmall device electrodes, which are connected by metalized vias to a morerugged and convenient pattern of top-side metal. If the lid material isa good conductor and/or if the lid vias are very dense, the ThinPaklidded device can be cooled from both sides or treated as a flip chipdevice, but without the usual limitations in achievable breakdownvoltage. The low impedance and small size and weight of the device, aswell as the rather large mechanical tolerances of the lid, make itconvenient for module applications.

The thin-film power overlay (POL) technology developed at GeneralElectric is an approach to reducing the cost of mass production andimproving the reliability and efficiency of power electronics packages.Power semiconductor devices are soldered to a Direct Bonded Copper (DBC)substrate from the backside. Differences in device thickness arecompensated by copper shims. A thin layer of polyamide sheet islaminated over the die after vias are laser machined or mechanicallypunched through the film. These vias provide openings for the powerinterconnect to the top layer. The whole top surface is then metallized(electro-plated) with copper. Circuit patterns are achieved by theapplication of photo resist and chemical etching processes. More layerscan be built up repeatedly to realize a multilayered interconnectstructure. Low-profile passive components can be embedded into theoverlay flex.

Dimple Array Interconnect (DAI) packaging involves the use of a coppersheet with arrays of dimples preformed serving as electricalinterconnections. The Dimple Array Interconnect structure has similarshape as the hourglass-shaped flip chip interconnect.

International Rectifier's DirectFET is a surface-mount package thatimproves MOSFET performance by lowering both the package's electricaland thermal resistance. It does so with a design that permits directattachment of the die to the pc board via solderable pads on the chipand through attachment to a copper drain clip that allows double-sidedcooling. The DirectFET package comprises a passivated die attached to acopper clip. Solderable metal contacts on the bottom of the die providegate and source contacts to the pc board, while the copper clip providesan electrical connection to the drain and permits topside cooling.Although the package has the same outline as an SO-8, the DirectFET'sheight is 60% less.

In Vishay Siliconix's PowerConnect technology, traditional bondwires arereplaced with a direct connection between the MOSFET die and the copperleadframe to lower a package's contribution to the device's onresistance, R_(DS(on)) in low-voltage power MOSFETs. To accomplish thisdirect connection, the top surface of the MOSFET die had to be madesolderable. Toward that end, the company developed a nickel-basedmetallization process on top of the aluminum. The result is that theleadframe can be attached to both the bottom and the top surface of thedie.

Semikron is making baseless IGBT power modules based on pressure contactpackaging technology through the use of a spring pad and a pressureplate. The elimination of the base plate and thus the solder jointbetween the base plate and substrate, together with the use of springcontacts to establish connections between the built-in gate drive boardand the substrate, leads to improved reliability and enables a very costeffective module and power electronic system assembly. Semikronpackaging is designed for traditional heat-sink cooling and is notapplicable to direct refrigerant cooling. The chips are cooled by a heatsink.

Virginia Polytechnic Institute and State University disclosed athree-dimensional packaging technique developed for power electronicsbuilding blocks using direct copper bonding to interconnect powerdevices. The parallel-plate structure provides the potential fordouble-sided cooling, direct liquid cooling of the power devices betweenthe plates, and integration of passive components in the module.

FlipChip technology uses a ball grid array package resulting in a wirebondless system. The interconnection between the die and carrier in flipchip packaging is made through a conductive “bump” that is placeddirectly on the die surface. The bumped die is then “flipped over” andplaced face down, with the bumps connecting to the carrier directly.After the die is soldered, underfill is added between the die and thesubstrate. Underfill is a specially engineered epoxy that fills the areabetween the die and the carrier, surrounding the solder bumps. It isdesigned to control the stress in the solder joints caused by thedifference in thermal expansion between the silicon die and the carrier.Once cured, the underfill absorbs the stress, reducing the strain on thesolder bumps, greatly increasing the life of the finished package. Thechip attach and underfill steps are the basics of flip chip interconnect

A flex-circuit interconnection system is being developed at the Centerfor Power Electronics Systems at Rensselaer Polytechnic Institute. Thismethod offers extra layout design freedom in the vertical dimension ofthe package. Compared with the conventional power module, the powerterminals in the flex-circuit package are distributed on the DBC and theflex substrate with close proximity and planar configuration. As aresult, the package parasitic inductance can be reduced significantly.

SUMMARY OF THE INVENTION

A cascaded die mounting device and method using spring contacts for dieattachment, with or without metallic bonds between the contacts and thedies, is disclosed. One embodiment is for the direct refrigerant coolingof an inverter/converter carrying higher power levels than most of thelow power circuits previously taught, and does not require using a heatsink. The invention is an interconnect and mounting device comprising atleast three cascaded layers of electronic components, a means forelectrically interconnecting said layers at contact points, a means forconnecting input power to said device, a means for connecting outputpower to said device, wherein said components modify said input power toproduce said output power, and wherein said components are cooled bydirect refrigerant contact.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of a basic cascaded mounting arrangement withexample wirebonds.

FIG. 2 is a diagram of a basic cascaded mounting arrangement withexample spring-loaded contacts with or without metallic bonds.

FIG. 3 is a diagram of example spring contacts arrangement on a layer.

FIG. 4 is a diagram of example spring-loaded isolated contact-bondarrangement

FIG. 5 is a diagram of a cascade silicon die mounting to a solidconducting plate.

FIG. 6 is a diagram for a slotted geometry cascade silicon die mounting.

FIG. 7 is a diagram of a cascaded mounting arrangement having atriangular inner structure and a hexagonal outer structure.

FIG. 8 is a diagram of a cascaded mounting arrangement having four legs.

DETAILED DESCRIPTION

FIG. 1 shows a basic cascaded mounting embodiment. Three layers areshown but the invention is not limited to a specific number of layers.Beginning with the first layer 1, a metal such as copper alloy withother appropriate thermal expansion controlling material such as a pieceof ceramics, carbon foam, or low expansion alloy to form a direct metalbond substrate is used as a conducting plate 11. Optional features suchas modifying the conducting plates 11, 12, 13 with an array of smallholes that enable an array of thin wires going through the thermalexpansion controlling material, resulting in another option of matchingthermal expansion with the dies. The semiconductor switches 6 and diodes4 dies are metallically bonded to a surface of the conducting plate 11to form the first layer 1. The semiconductor switches can have built-indiodes. Wirebonds 7 are used at interconnecting wiring contact points.The second layer 2 comprises three separate small conducting plates 12.One surface of each small conducting plate 12 has a set of a switch 6,and a diode 4 metallically bonded to it. Each three-phase power leg 8,9, and 10 is connected to a separate small conducting plate 12. Thethird layer is a conducting plate 13. The three plates are mounted in acascaded form with sufficient spacing between the layers for liquidrefrigerant to flow through and for bubbles formed by refrigerantnucleate boiling to be rapidly expelled by the moving liquidrefrigerant.

FIG. 2 shows the basic cascaded mounting embodiment with spring-loadedcontacts 29. There are three cascaded layers 21, 22, 23. On the firstlayer 21, the dies of switches 30 and diodes 32 are placed on a thermalexpansion controlled conducting plate 33 to form the first layer 21.Bonding material can be distributed on the conducting plate 33 prior tocomponent placement. The second layer 22 comprises three separate smallconducting plates 34. On the lower surface of each small conductingplate 34, a sufficient number of fine spring-loaded contacts 29 aredisposed between each small conducting plate 34 and a switch 30/diode 32on the upper surface of the first layer 21. There can be bondingmaterial distributed on the small conducting plates 34 prior toassembly. The number of spring-loaded contacts 29 is determined by thepermissible current density of the contacts and the requireddistribution on the die 30. The upper surface of each small conductingplate 34 has a switch 30/diode 32 disposed on the upper surface with orwithout use of a bonding material. The third conducting plate 35 hasspring-loaded contacts 29 disposed between the lower surface of thethird conducting plate 35 and each switch 30/diode 32 on the secondlayer 22. The spring-loaded contacts 29 supply contact pressure betweeneach switch 30/diode 32 and its respective conductive plate mounting.The three layers are assembled together under a predetermined springload.

Optionally, metallic bonding of the sufficient number of finespring-loaded contacts 29 to its respective switch 30/diode 32 is used.The reasons for sufficient number of fine contacts are to carrysufficiently high current and not to post thermal expansion stress onthe dies. There must be sufficient clearance to perform metallic bondingonce the layers are assembled. For example, metallic bonding could beperformed using a multiple-finger ultrasonic bonding head to createmetallic bonds between the spring-loaded contacts 29 and switches 30 ordiodes 32. Alternatively, a laser could be utilized for themultiple-finger bonding. Another option would be placing the assembly inan oven under proper environment control to bond the switches 30 anddiodes 32 to the fine spring-loaded contacts. It would be necessary toensure the oven's operating temperature did not exceed the temperaturespecifications of the switches 30 and diodes 32.

There are many possible methods for assembling the conducting plates.The distance between the layers is determined by (1) the required springloads for the proper operation of the contacts, (2) the clearance for aself adjustment of the spring loads, (3) the sufficient clearanceavailable between the layers for the liquid refrigerant to flow and forthe bubbles to be rapidly expelled by the moving liquid refrigerant, (4)the mechanical integrity of the mounting structure, and (5) thetolerable maximum stray inductance of the spring contacts for specificapplications. As an example, the mounting can be a structure comprisestwo or more insulation bolts 25 per small conducting plate. Each boltpenetrates the three layers with given insulation spacers situatedbetween the layers for a predetermined spring load. Nuts at an end ofthe insulation bolt 25 can be used to draw the conducting platestogether. Other mounting parts determined by specific application can beused for assembly.

FIG. 3 illustrates three views of a small conducting plate 34 usingspring-loaded contacts 29 with or without metallic bonds. Thespring-loaded contacts 29 are extended out from the copper alloy of theconducting plate 45. Bonding material can be distributed on theconducting plate 45 prior to assembly. Only if needed the edges 41 ofthe copper alloy plate may be folded to increase the rigidity duringmanufacturing process. Each individual spring of the spring-loadedcontact 29 can be self adjusted by the bending of their spring arms 42.An assembly guide 44 is included to allow the small conducting plate 34sufficient freedom of movement for the self-adjustment of the springload in the spring-loaded contacts 29. A three-layer assembly similar tothat shown in FIG. 2 can be fabricated using this technique. The finespring-loaded contacts 29 can be constructed with metallic bonds using(a) multiple-head ultrasonic bonding techniques, (b) laser bonding, or(c) oven bonding.

FIG. 4 shows an insulated holder 57 attached to a stamped tab 56 toextend a spring contact 51 to the gate 31 of a switch 30 or otherisolated points. A conductive lead 55 for bringing out the gate controlcan be attached to the spring contact 51. Since all spring contacts 51are precisely located after the cascaded mounting is assembled, it ispossible to incorporate a reasonably simple step to bond the springcontacts 51 to a gate 31 or other isolated points with a bondingmaterial 52. Bonding will prevent fatigue of the springs.

FIG. 5 shows the silicon switch 30 and diode 32 dies in position tomount directly onto the conducting plate 45 with the thermal expansioncontrolling material 58 bonded to the back side of the conducting plate45 to thermally stabilize the plate and decrease thermal stress on thesilicon die. The thermal expansion controlling material 58 can be aceramic, low expansion metal, graphite foam, or other suitable material.

FIG. 6 shows the silicon switch 30 and diode 32 dies in position tomount onto a slotted conducting plate 59 with the thermal expansioncontrolling material 58 bonded to the back side of the slottedconducting plate 59 to thermally stabilize the plate and decreasethermal stress on the silicon die. Various slot geometries 60 can beused to match thermal growth of the silicon dies 30, 32 to the slottedconducting plate 59. The thermal expansion controlling material 58 canbe a ceramic, low expansion metal, graphite foam, or other suitablematerial.

FIG. 7 shows a three-phase, three-leg embodiment of the invention havingsemiconductor switches 62 cascade-mounted onto a triangular innerstructure 63. The triangular inner structure 63 supports lower switchesof the phase legs and also serves as a positive DC link terminal.Spring-loaded and soldered contacts 64 can be used in this embodiment. Ahexagonal outer structure 61 also serves as a negative DC link terminal.

FIG. 8 is a diagram of a four leg cascade inverter embodiment havingfour (4) copper conductor bars 71 for output connections supported, forexample, on an insulated base behind the cascade mounts. The cascadesegment 73 shows a two layer silicon die stack with the outer cylindercontacts not shown. The outer DC link cylinder 72 and the inner DC link74 feed DC power to the silicon dies. The DC power is then modified bythe silicon dies to produce AC power on the four output copper conductorbars 71. An insulating sleeve 75 is provided between the phases and DClink.

The embodiments shown are suitable for generating up to four-phaseoutput power however two-phase or other number of phases output power isgenerated by providing additional legs in the device.

While there has been shown and described what are at present consideredthe preferred embodiments of the invention, it will be obvious to thoseskilled in the art that various changes and modifications can be madetherein without departing from the scope.

1. An interconnect and mounting device comprising; at least threecascaded layers of electronic components, a means for electricallyinterconnecting said layers at contact points, a means for connectinginput power to said device, a means for connecting output power to saiddevice, wherein said cascaded layers further comprise at least oneconducting plate and at least one of said electronic components disposedon said conducting plate; said conducting plate further comprising ametal and a thermal expansion controlling material, wherein saidcomponents modify said input power to produce said output power, andwherein said components are cooled by direct refrigerant contact.
 2. Thedevice of claim 1 wherein said metal is a copper alloy.
 3. The device ofclaim 1 wherein said thermal expansion controlling material is selectedfrom the group consisting of ceramics, carbon foam, and low expansionalloy.
 4. The device of claim 1 wherein said thermal expansioncontrolling material further comprises an array of small holes.
 5. Thedevice of claim 1 where said electronic components are metallicallybonded to said conducting plate.
 6. The device of claim 1 wherein saidinput power is DC and said output power is three-phase AC.
 7. The deviceof claim 6 wherein each phase of said three-phase AC output power isconnected to separate conducting plates on the same cascaded layer. 8.The device of claim 1 wherein said electronic components are selectedfrom the group consisting of semiconductor switches, diodes, andsemiconductor switches with built-in diodes.
 9. The device of claim 1wherein said means for electrically interconnecting said layers furthercomprises wirebonds.
 10. The device of claim 1 wherein said means forelectrically interconnecting said layers further comprises spring-loadedcontacts having two ends.
 11. The device of claim 10 wherein each end ofsaid spring-loaded contacts is metallically bonded to a separate layer.12. The device of claim 10 wherein said device further comprises atleast one insulation bolt, nut, and spacer to mechanically interconnectsaid layers.
 13. The device of claim 10 wherein said spring-loadedcontacts are stamped out from the metal of said conducting plates. 14.The device of claim 10 wherein at least one of said spring-loadedcontacts further comprises a conductive lead and an insulated holderdisposed on a stamped tab to extend said spring-loaded contact.